Abstract: Raman spectroscopy was applied to analyze the residual stress of boron-doped diamond film on silicon wafer by different growth pressures and different carbon source concentrations.Photolithography and etching technique were used to fabricate diamond micro-structures.Resultsshow that the residual stress in the diamond films generally tends to be compressive stress.It is also found that the residual stress in the diamond film could significantly be reduced by optimizing the growth pressure and that it changes from compressive stress to tensile stress while the growth pressure is increased from 1.3kPa to 6.5kPa.The carbon source concentration has small effect on residual stress but big influence on the diamond film quality.In the end, cantilever, angle accelerometer, acoustic diaphragm were fabricated from the low residual diamond film by photolithography and etching.