硼及其协同掺杂金刚石块体的研究进展

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名

邮箱

手机号码

标题

留言内容

验证码

Development of boron and its synergistic doped diamond blocks

1. School of Mechanical Engineering, Yanshan University, Qinhuangdao 066004, Hebei, China;
2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China;
3. Guangdong Monte-Bianco New Material Co., Ltd., Foshan 528313, Guangdong, China;
4. Zhongnan Diamond Co., Ltd., Nanyang 473000, Henan, China

摘要: 掺入硼等杂质元素可以使金刚石获得半导体特性，利用高温高压法可以制备出性能优良的金刚石半导体材料。本文介绍了硼及其协同掺杂金刚石块体材料的研究现状，综述了掺杂对金刚石的形貌、结构及性能的影响，阐明了制备过程中影响掺杂金刚石质量的因素，展望了硼及其协同掺杂金刚石块体材料的应用前景。
- 高温高压 /
- 金刚石块体 /
- 硼及其协同掺杂 /
- 半导体
Abstract: The semiconductor properties of diamond can be obtained by adding impurity elements like boron. Diamond semiconductor materials with excellent properties can be prepared by high temperature and pressure method. This paper introduces the research development of boron and its co-doped diamond block materials. It summarizes the influence of doping on the morphology, structure and properties of diamond. The factors that affect the quality of doped diamond under high temperature and pressure are clarified. In the end, this paper looks forward to the application prospect of boron and its co-doped diamond block materials.
- high pressure and high temperature /
- diamond blocks /
- boron and its co-doping /
- semiconductor