Abstract: The influence of structure of vitrified bond diamond grinding wheel on the grinding performance for silicon wafer was studied. The influence of structure on grinding wheel wear and spindle current was evaluated, and the surface roughness and surface morphology of ground silicon wafer were measured. The results show that the spindle current decreases from the highest 7.0 A to 6.3 A with the increase of the porosity of grinding wheel tissue. On the other hand, the wear rate of grinding wheel shows the opposite rule, which is from 1.423 8 μm per piece to 2.525 2 μm per piece, as the porosity of the wheel ranges from its valley to the peak. It is also found that the structure has little influence on the surface roughness of the workpiece, which is 7.67 nm, 7.47 nm and 7.37 nm, respectively. However, when the pore diameter is too large and the hole wall becomes thinner, deep scratches will appear on the surface of the workpiece and the grinding quality of silicon wafer will be deteriorated.