MPCVD法制备金刚石膜的工艺

李思佳; 冯曙光; 郭胜惠; 杨黎; 高冀芸

doi:10.13394/j.cnki.jgszz.2021.6.0006

MPCVD法制备金刚石膜的工艺

doi: 10.13394/j.cnki.jgszz.2021.6.0006

李思佳^1,2,
冯曙光²,
郭胜惠^1,2,
杨黎²,
高冀芸^2,3, ,

1. 昆明理工大学, 复杂有色金属资源清洁利用国家重点实验室, 昆明 650093;
2. 昆明理工大学冶金与能源工程学院, 昆明 650093;
3. 云南民族大学化学与环境学院, 昆明 650500

基金项目:

云南省杰出青年基金(2019FJ005)。

云南省应用基础研究计划(2018FA029,2018FD053)

国家自然科学基金(51864028)

详细信息

作者简介:
李思佳,女,1997年生,硕士。主要研究方向：微波等离子化学气相沉积金刚石膜。E-mail：lisijia0430@163.com

通讯作者:
高冀芸,女,1989年生,硕士、讲师。主要研究方向：微波法制备金刚石制品及功能材料。E-mail: jiyungao89@163.com

中图分类号: TB383.2;TQ164
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出版历程
- 修回日期: 2021-10-12
- 网络出版日期: 2022-04-07

Preparation technology of diamond film by MPCVD method

LI Sijia^1,2,
FENG Shuguang²,
GUO Shenghui^1,2,
YANG Li²,
GAO Jiyun^{2,3
, ,}

1. State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, KunmingUniversity of Science and Technology, Kunming 650093, China;
2. Faculty of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China;
3. School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, China

摘要

摘要: 采用3 kW/2 450 MHz微波等离子体化学气相沉积(microwave plasma chemical vapor deposition, MPCVD)系统，以单晶硅为基底材料，采用单因素试验法研究微米级金刚石膜的生长工艺，分别探究衬底温度、腔体压强和甲烷体积分数对金刚石成膜过程的影响，获得微米级金刚石膜的最优生长工艺。结果表明：金刚石膜的生长速率与衬底温度、腔体压强、甲烷体积分数呈正相关；衬底温度和腔体压强对金刚石膜质量的影响存在最佳的临界值，甲烷体积分数过高不利于形成金刚石相。金刚石膜生长的最佳工艺参数为：功率为2 200 W，衬底温度为850 ℃，腔体压强为14 kPa，甲烷的体积分数为2.5%。在此条件下，金刚石膜生长速率为1.706 μm/h，金刚石相含量为87.92%。
- 金刚石膜 /
- 微波等离子体化学气相沉积 /
- 制备工艺
Abstract: With 3 kW/2 450 MHz microwave plasma chemical vapor deposition (MPCVD) system, the growth process of micron diamond film was studied by single factor experimental method with monocrystalline silicon as the substrate. The effects of substrate temperature, cavity pressure and methane volume concentration on the diamond film forming process were investigated and the optimal growth process of micron diamond film was obtained. The results show that the growth rate of diamond film is positively correlated with substrate temperature, cavity pressure and methane volume concentration. There is the best critical value of substrate temperature and cavity pressure for the quality of diamond film. The too high methane volume concentration is not conducive to the formation of diamond phase. The optimum parameters of diamond film growth are determined as follows. The power is 2 200 W, substrate temperature is 850 ℃, cavity pressure is 14 kPa, and methane volume concentration is 2.5%. In this case, growth rate of diamond film is 1.706 μm/h, and diamond phase content is 87.92%.
- diamond film /
- microwave plasma chemical vapor deposition /
- preparation process