Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP
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摘要: 针对化学机械抛光中磨料易团聚、机械和化学作用不能充分发挥等问题，采用振动辅助的方法进行优化。通过分子动力学模拟，分析磨粒振动的频率、振幅及其压入深度、划切速度对工件表面微观原子迁移的演变规律，揭示振动对材料去除和表面改善的促进机制；并通过振动辅助化学机械抛光工艺试验和表面成分分析，验证振动辅助的抛光效果和去除机制。结果表明：适当增大磨粒的振动频率、振动振幅及其压入深度、划切速度，可有效提高工件表面的原子势能和温度；磨粒振动有利于提高工件表面原子的混乱度，促进碳化硅参与氧化反应，形成氧化层并以机械方式去除；抛光试验和成分分析也证实振动可以提高材料去除率约50.5%，改善表面质量约25.4%。Abstract: To address issues related to abrasion, agglomeration, and the challenges of mechanical and chemical release during chemical mechanical polishing (CMP), a vibration-assisted CMP method is employed. Molecular dynamics simulation analyze the dynamic evolution of frequency, amplitude, and indentation depth, along with the dicing speed of abrasive vibration on the workpiece's surface. It reveals the mechanism behind enhanced material removal and improved surface quality facilitated by vibration. The effectiveness and removal mechanism of vibration-assisted CMP are validated through process testing and surface composition analysis. The results show that atomic potential energy and temperature on the workpiece surface can be effectively improved by appropriately increasing vibration frequency, vibration amplitude, indentation depth, and abrasive particle cutting speed. Abrasive vibration contributes to increased atomic disorder on the workpiece surface, facilitating the participation of silicon carbide in oxidation reactions. This process results in the formation of an oxide layer, which is mechanically removed. Polishing tests and composition analyses also confirms that vibration can improve material removal rates by about 50.5% and improve the surface quality by about 25.4%.
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Key words:
- silicon carbide /
- vibration /
- chemical mechanical polishing (CMP) /
- molecular dynamics
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图 2 压电陶瓷片逆压电效应示意图
Figure 2. Schematic diagram of inverse piezoelectric effect of piezoelectric ceramic sheet
图 8 划切后形成的非晶层截面图及非晶原子数
Figure 8. Cross-sectional view of amorphous layer formed after dicing and number of amorphous atoms
图 10 振动对势能和温度的变化曲线
Figure 10. Variation curve of vibration to potential energy and temperature
图 11 不同振动频率下磨粒中心原子的划切运动轨迹及产生的非晶原子数
Figure 11. Scratch trajectory of central atom of abrasive particles and number of amorphous atoms produced under different vibration frequencies
图 12 不同振动频率划切后工件表面形貌俯视图
Figure 12. Top view of workpiece surface topography after dicing at different vibration frequencies
图 13 不同振动频率下势能和温度的变化曲线
Figure 13. Variation curves of potential energy and temperature under different vibration frequencies
图 14 不同振幅划切后的工件表面形貌俯视图
Figure 14. Top view of workpiece surface topography after dicing with different amplitudes
图 15 不同振幅下产生的原子堆积及其数量统计
Figure 15. Atomic accumulation under different amplitudes and its quantitative statistics
图 16 不同振幅划切后非晶层截面及非晶原子数统计
Figure 16. Statistics of amorphous layer cross section and amorphous atom number after different amplitude dicing
图 17 不同振幅划切后的工件截面形貌
Figure 17. Cross-sectional morphology of workpiece after dicing with different amplitudes
图 18 不同振幅下势能、温度、切削力的变化曲线
Figure 18. Variation curves of potential energy, temperature and cutting force under different amplitudes
图 19 不同压入深度划切后的工件截面形貌
Figure 19. Cross-sectional morphology of workpiece after cutting with different indentation depths
图 20 不同压入深度划切后形成的非晶原子数
Figure 20. Number of amorphous atoms formed after dicing at different indentation depths
图 21 不同压入深度下势能和温度的变化曲线
Figure 21. Variation curves of potential energy and temperature at different penetration depths
图 22 不同划切速度下产生的原子堆积及其数量统计
Figure 22. Atomic accumulation and its quantitative statistics under different cutting speeds
图 23 不同划切速度下势能、温度和切削力的变化曲线
Figure 23. Variation curves of potential energy, temperature and cutting force at different cutting speeds
图 25 振动辅助CMP后的碳化硅表面微观形貌
Figure 25. Surface micromorphology of SiC after vibration-assisted CMP
图 26 振动频率对振动辅助CMP效果的影响
Figure 26. Influence of vibration frequency on vibration assisted CMP effect
图 27 振动频率对光催化辅助CMP效果的影响
Figure 27. Effect of vibration frequency on photocatalytic assisted CMP effect
表 1 模拟参数设置
Table 1. Simulation parameter setting
参数 类型或取值 工件材料 单晶SiC 工件尺寸 185 Å × 96 Å × 60 Å 工件原子个数 103 680 磨粒半径 r / Å 20 磨粒原子个数 5 894 势能函数 Tersoff 边界条件 p p f 初始温度 T / K 298 振动频率 f / GHz 40，60，80，100 振幅 B / nm 0.4，0.8，1.2，1.6 压入深度 ap / nm 0.3，0.6，0.9，1.2 划切速度 v / (m·s−1) 50，75，100，125 
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