Chemical-mechanically polishing large areafree-standing CVD diamond films
doi: Code:10.13394/j.cnki.jgszz.2018.6.0013
Chemical-mechanically polishing large areafree-standing CVD diamond films
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摘要: Chemical mechanical polishing is used to polish large area free-standing CVD diamond films with diameters of 66 mm. The influence of polishing plates (iron plate, asphalt plate and soft cushion) and oxidizing agents (K2S2O8 and K2FeO4) on polishing results are investigated. Profilometer (tip radius 5 μm), optical microscope and Raman spectroscopy are used to evaluate the polishing effects of the CVD diamond films. Results show that the material removal rate of iron plate is the highest, while the surface polished by soft cushion is the most uniform with roughness of 2 nm. It is also found that the most effective oxidizing agent is K2FeO4. In conclusion, the optimum polishing conditions are soft cushion and K2FeO4.Abstract: Chemical mechanical polishing is used to polish large area free-standing CVD diamond films with diameters of 66 mm. The influence of polishing plates (iron plate, asphalt plate and soft cushion) and oxidizing agents (K2S2O8 and K2FeO4) on polishing results are investigated. Profilometer (tip radius 5 μm), optical microscope and Raman spectroscopy are used to evaluate the polishing effects of the CVD diamond films. Results show that the material removal rate of iron plate is the highest, while the surface polished by soft cushion is the most uniform with roughness of 2 nm. It is also found that the most effective oxidizing agent is K2FeO4. In conclusion, the optimum polishing conditions are soft cushion and K2FeO4.
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Key words:
- polishing plate /
- oxidizing agent /
- material removal rate /
- surface roughness
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