Properties of boron doped diamond films prepared by new type of boron source

doi: 10.13394/j.cnki.jgszz.2017.1.0002

• WANG Liang^1,2 , 
• JIANG Caiyi^1,2 , 
• GUO Shenghui^1,3,2,4 , 
• GAO Jiyun⁵ , 
• HU Tu^3,2 , 
• YANG Li^{1,3,2,4 ,  ,}  , 
• PENG Jinhui^1,3,2,4 , 
• ZHANG Libo^1,3,2,4

• 1. State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming 650093, China;

• 2. National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming 650093, China;

• 3. MoE Key Laboratory of Unconventional Metallurgy, Kunming 650093, China;

• 4. School of Chemistry and Environment, Yunnan Minzu University, Kunming 650031, China;

• 5. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China