Surface residual stress measurement of silicon carbidebased on fast surface detection method

One-dimensional X-ray diffraction method is usually used to measure the residual stress on the surface of ceramics after processing. There are some problems in the measurement process, such as tedious, inefficient and high cost. Therefore, a new fast two-dimensional X-ray diffraction residual stress measurement method is used to measure the residual stress on the surface of silicon carbide ceramics. In the experiment, the residual stress on the initial surface and polished surface of three different brands of silicon carbide workpieces are measured. The results show that the new method can obtain the diffraction information of 500 points in a single measurement, which is especially suitable for the stress measurement of ceramic materials. It is also found that for the residual compressive stress of the machined surface, polishing can eliminate up to 80% of the residual stress, but can not change the residual stress distribution of the workpiece.