Preparing SiO₂/ZnO/diamond/silicon multilayer structure for surface acoustic wave devices

To prepare the multilayer structure for surface acoustic wave devices, the deposition parameters of ZnO and SiO₂films were optimized using magnetron sputtering method and SiO₂/ZnO/ diamond/Si multilayer structure was prepared. With the increase of the argon oxygen ratio, the deposition rate of ZnO thin films were accelerated, and the surface roughness became larger. The atomic molar fraction ratio of ZnO films approached ideal 1∶1. All ZnO films prepared under different argon oxygen ratios presented (002) preferred orientation. At the argon oxygen ratio of 7∶1, ZnO film possessed the fine columnar grains and higher C-axis preferred orientation. The SiO₂/ZnO/diamond/Si multilayer structure with clear interface was obtained on diamond/Si substrate by using the optimal deposition process of ZnO and SiO₂thin films.