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Volume 45 Issue 3
Jun.  2025
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Article Navigation >  Diamond & Abrasives Engineering  > 2025  >  45(3): 366-376
ZHANG Dehan, DING Kang, CAI Xintong, YANG Feng, DONG Zhigang, BAO Yan, GUO Xiaoguang, KANG Renke. Experiment and simulation of single diamond abrasive particle scratching RB-SiC composite material[J]. Diamond & Abrasives Engineering, 2025, 45(3): 366-376. doi: 10.13394/j.cnki.jgszz.2024.0053
Citation: ZHANG Dehan, DING Kang, CAI Xintong, YANG Feng, DONG Zhigang, BAO Yan, GUO Xiaoguang, KANG Renke. Experiment and simulation of single diamond abrasive particle scratching RB-SiC composite material[J]. Diamond & Abrasives Engineering, 2025, 45(3): 366-376. doi: 10.13394/j.cnki.jgszz.2024.0053
shu

Experiment and simulation of single diamond abrasive particle scratching RB-SiC composite material

doi: 10.13394/j.cnki.jgszz.2024.0053

  • State Key Laboratory of High-performance Precision Manufacturing, Dalian University of Technology, Dalian 116024, Liaoning, China

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  • Received Date: 2024-03-20
  • Accepted Date: 2024-06-24
  • Rev Recd Date: 2024-05-26
    Abstract
  •   Objectives  Reaction-sintered silicon carbide (RB-SiC) composite materials have excellent properties such as high specific stiffness, high hardness, and corrosion resistance, and are widely used in important equipment such as space telescopes and aerospace combustion chambers. However, the high hardness and brittleness lead to many defects when processed using traditional methods. To investigate the material removal mechanism and the surface damage causes during the grinding process of RB-SiC composite materials, the ABAQUS finite element software is used for scratch simulation and the scratching experiment of a single diamond abrasive indenter is used for verification.  Methods  Based on ABAQUS finite element simulation software, a scratch simulation model of RB-SiC composite material with a multiphase structure is constructed. The model uses a continuously distributed Si and β - SiC mixture as the matrix, characterized using the Drucker Prager elastoplastic constitutive model. The SiC reinforcement phase distributed in particle or powder form is characterized using brittle fracture as the failure criterion, and a zero-thickness cohesive unit interface layer is established between the two phases. The relationship between the scratch force and the scratch depth is investigated by a single abrasive particle scratch experiment, and compared with the simulation model. The material removal mechanism and the causes of surface damage are then obtained.  Results  In the simulation, it is found that the variation of scratching force is closely related to the relative position between the particles and the pressure head. The scratching forces of particles in the middle of the trajectory suddenly increase, while particles above the trajectory have a smaller impact on scratching force. The particles below the trajectory have a slightly smaller impact on scratching force than those above. When the pressure head penetrates the middle of the particle, its stress is greater than the particle fracture strength, causing transgranular fracture of the particle. At the same time, the crack continues to propagate to the boundary between the two phases and deflects along the boundary. The particles above the trajectory will be removed as a whole with the removal of the matrix material. When multiple particles are in close proximity and sequentially in contact with the indenter, the stress concentration during the fragmentation of the front particles and the plastic deformation of the matrix is greater than the fracture stress of the rear particles, resulting in the collapse of the rear particles before they come into direct contact with the indenter. The deformed matrix that has lost particle support and has not been completely removed will be pushed to the next particle by the indenter, causing a sudden drop in scratching force. The scratch experiment shows that the crushing width of the scratch path increases with the increase of scratch depth. When the scratch depth is 5 μm, the material surface is relatively flat, and the material is mainly removed by plastic deformation of the matrix. When the scratch depth increases to 30 μm, the brittle peeling phenomenon of the material becomes more and more obvious, and the surface morphology of the material also deteriorates. It can be observed that the cleavage and fragmentation of particles, the voids formed by particle extraction, the transverse cracks, and the matrix delamination and fan-shaped fracture zone are caused by the diagonal downward propagation of the medium diameter crack. This is because the scratch depth is much greater than the plastic brittle transition depth of the material, and the material is mainly removed by brittleness.  Conclusions  By establishing a two-phase finite element simulation two-dimensional model for single abrasive particle scratching simulation and conducting experimental verification, it is found that the surface morphology of scratches deteriorates with increasing scratching depth, and the scratching force gradually decreases with decreasing scratching depth. Moreover, the simulation and the experimental scratching force values for small scratching depths are in good agreement. The relative position between the SiC particles and the diamond indenter tip trajectory, as well as the spacing between the SiC particles, leads to changes in scratching force. The SiC particles located above the trajectory will cause the scratching force to increase significantly. When the scratch depth is shallow and there are no original SiC particles near the surface, plastic removal will still occur. The subsurface cracks start at the particle-matrix interface and spread along the particle phase boundary to form micro-cracks. When the outlet support of the material is insufficient, the micro-cracks of different depths will expand and converge, eventually producing the phenomenon of material edge collapse. This study provides a theoretical basis and simulation verification for the removal mechanism and damage formation causes of RB-SiC materials.

     

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