单颗金刚石磨粒划擦反应烧结碳化硅复合材料的实验及仿真

张德涵; 丁康; 蔡昕彤; 杨峰; 董志刚; 鲍岩; 郭晓光; 康仁科

doi:10.13394/j.cnki.jgszz.2024.0053

单颗金刚石磨粒划擦反应烧结碳化硅复合材料的实验及仿真

doi: 10.13394/j.cnki.jgszz.2024.0053

大连理工大学, 高性能精密制造全国重点实验室, 辽宁大连 116024

基金项目: 国家重点研发计划（2022YFB3403401）。

详细信息

作者简介:
康仁科，男，1962年生，教授。主要研究方向：精密与超精密加工、特种加工等。E-mail：kangrk@dlut.edu.cn

中图分类号: TG74; TG58
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出版历程
- 收稿日期: 2024-03-20
- 修回日期: 2024-05-26
- 录用日期: 2024-06-24
- 刊出日期: 2025-06-30

Experiment and simulation of single diamond abrasive particle scratching RB-SiC composite material

State Key Laboratory of High-performance Precision Manufacturing, Dalian University of Technology, Dalian 116024, Liaoning, China

摘要

摘要: 反应烧结碳化硅（RB-SiC）复合材料具有比刚度高、硬度高、耐腐蚀和耐磨损等优异性能，被广泛用于航空航天等领域，然而其较高的硬度和脆性等导致使用传统加工方式时易出现较多缺陷。为探究RB-SiC复合材料磨削加工时的材料去除机理及表面损伤成因，开展单颗金刚石磨粒压头划擦实验，同时以连续分布的Si为基体，以呈颗粒或粉末状分布的SiC相为增强相，构建新的RB-SiC复合材料有限元仿真模型，并利用ABAQUS有限元仿真软件进行划擦仿真，研究复合材料表面的裂纹形成及材料去除机理，掌握划擦过程中压头−颗粒相互作用导致的切削力变化规律。结果表明，划擦实验与模型仿真结果吻合情况较好。随着切削深度增加，切削力逐渐增大，划痕路径上的破碎范围变大，材料表面形貌变差；当切削深度大于塑脆转变深度时，材料以脆性去除为主，划擦产生的应力向前传递，产生沿晶和穿晶裂纹；且划擦产生的应力大于SiC颗粒断裂应力，使SiC颗粒破碎去除，而基体则塑性去除；SiC颗粒与金刚石磨粒尖端的轨迹相对位置及SiC颗粒间距会导致划擦力变化，位于金刚石磨粒尖端移动轨迹上的SiC颗粒会导致划擦力上升，SiC颗粒间距过近时则划擦力会突升并在后方SiC颗粒破碎后骤降。
- RB-SiC复合材料 /
- 单颗金刚石划擦 /
- 有限元仿真 /
- 划擦力
Abstract: Objectives Reaction-sintered silicon carbide (RB-SiC) composite materials have excellent properties such as high specific stiffness, high hardness, and corrosion resistance, and are widely used in important equipment such as space telescopes and aerospace combustion chambers. However, the high hardness and brittleness lead to many defects when processed using traditional methods. To investigate the material removal mechanism and the surface damage causes during the grinding process of RB-SiC composite materials, the ABAQUS finite element software is used for scratch simulation and the scratching experiment of a single diamond abrasive indenter is used for verification. Methods Based on ABAQUS finite element simulation software, a scratch simulation model of RB-SiC composite material with a multiphase structure is constructed. The model uses a continuously distributed Si and β - SiC mixture as the matrix, characterized using the Drucker Prager elastoplastic constitutive model. The SiC reinforcement phase distributed in particle or powder form is characterized using brittle fracture as the failure criterion, and a zero-thickness cohesive unit interface layer is established between the two phases. The relationship between the scratch force and the scratch depth is investigated by a single abrasive particle scratch experiment, and compared with the simulation model. The material removal mechanism and the causes of surface damage are then obtained. Results In the simulation, it is found that the variation of scratching force is closely related to the relative position between the particles and the pressure head. The scratching forces of particles in the middle of the trajectory suddenly increase, while particles above the trajectory have a smaller impact on scratching force. The particles below the trajectory have a slightly smaller impact on scratching force than those above. When the pressure head penetrates the middle of the particle, its stress is greater than the particle fracture strength, causing transgranular fracture of the particle. At the same time, the crack continues to propagate to the boundary between the two phases and deflects along the boundary. The particles above the trajectory will be removed as a whole with the removal of the matrix material. When multiple particles are in close proximity and sequentially in contact with the indenter, the stress concentration during the fragmentation of the front particles and the plastic deformation of the matrix is greater than the fracture stress of the rear particles, resulting in the collapse of the rear particles before they come into direct contact with the indenter. The deformed matrix that has lost particle support and has not been completely removed will be pushed to the next particle by the indenter, causing a sudden drop in scratching force. The scratch experiment shows that the crushing width of the scratch path increases with the increase of scratch depth. When the scratch depth is 5 μm, the material surface is relatively flat, and the material is mainly removed by plastic deformation of the matrix. When the scratch depth increases to 30 μm, the brittle peeling phenomenon of the material becomes more and more obvious, and the surface morphology of the material also deteriorates. It can be observed that the cleavage and fragmentation of particles, the voids formed by particle extraction, the transverse cracks, and the matrix delamination and fan-shaped fracture zone are caused by the diagonal downward propagation of the medium diameter crack. This is because the scratch depth is much greater than the plastic brittle transition depth of the material, and the material is mainly removed by brittleness. Conclusions By establishing a two-phase finite element simulation two-dimensional model for single abrasive particle scratching simulation and conducting experimental verification, it is found that the surface morphology of scratches deteriorates with increasing scratching depth, and the scratching force gradually decreases with decreasing scratching depth. Moreover, the simulation and the experimental scratching force values for small scratching depths are in good agreement. The relative position between the SiC particles and the diamond indenter tip trajectory, as well as the spacing between the SiC particles, leads to changes in scratching force. The SiC particles located above the trajectory will cause the scratching force to increase significantly. When the scratch depth is shallow and there are no original SiC particles near the surface, plastic removal will still occur. The subsurface cracks start at the particle-matrix interface and spread along the particle phase boundary to form micro-cracks. When the outlet support of the material is insufficient, the micro-cracks of different depths will expand and converge, eventually producing the phenomenon of material edge collapse. This study provides a theoretical basis and simulation verification for the removal mechanism and damage formation causes of RB-SiC materials.
- RB-SiC composite material /
- single diamond scratch /
- finite element simulation /
- grinding force

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图 1 样件表面的微观结构、元素分布及表面粗糙度

Figure 1. Microstructure, element distribution and surface roughness of specimen surface

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图 2 单颗粒划擦实验平台组成

Figure 2. Compositions of single particle scratch experimental platform

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图 3 界面层建模方法^[16]

Figure 3. Interface layer modeling methods^[16]

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图 4 基体及颗粒模型

Figure 4. Matrix material and particle model

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图 5 金刚石压头建模

Figure 5. Diamond indenter modeling

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图 6 网格划分结果及边界设置

Figure 6. Result of grid division and boundary setting

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图 7 不同划擦深度下实验与仿真的划擦力平均值

Figure 7. Average scratch force values of experiments and simulations at different scratch depths

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图 8 划擦轨迹及对应时刻划擦力结果

Figure 8. Scratch trajectory and scratching force results at corresponding times

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图 9 各颗粒的应力分布云图及颗粒断裂放大图

Figure 9. Stress distribution nephogram of each particle and enlarged diagram of particle fracture

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图 10 不同划擦深度下的划擦路径宽度及破碎宽度

Figure 10. Scratch path widths and crushing widths under different scratch depths

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图 11 划擦路径放大图

Figure 11. Scratch path enlargement

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图 12 划擦深度为5 μm下材料表面的塑性去除

Figure 12. Plastic removal of material surface at scratch depth of 5 μm

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图 13 不同划擦深度下的仿真结果

Figure 13. Simulation results under different scratch depths

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图 14 亚表面裂纹扩展及其对应应力的仿真结果

Figure 14. Simulation results of subsurface crack propagation and its corresponding stress

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表 1 RB-SiC复合材料的基本力学性能参数^[9]

Table 1. Basic mechanical property parameters of RB-SiC composite materials^[9]

参数	取值
密度 ρ₁ / (g·cm⁻³)	3.16
弹性模量 E₁ / GPa	420
泊松比 ε₁	0.17
断裂韧性 K_IC / (MPa·m^1/2)	3.04
维氏硬度 H_V / MPa	2 002

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表 2 实验条件

Table 2. Testing condition

实验编号	划擦深度 a_p / μm	划擦速度 v / (m·s⁻¹)
1	5	2.4
2	10	2.4
3	20	2.4
4	30	2.4

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表 3 基体材料的本构模型参数

Table 3. Constitutive model parameters of matrix material

参数	取值
密度 ρ₂ / (g·cm⁻³)	2975
弹性模量 E₂ / MPa	385 870
泊松比 ε₂	0.24
初始屈服强度 σ / MPa	800
摩擦角 β / (°)	15
膨胀角 Ψ / (°)	−1
流应力比 R	0.9

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表 4 SiC颗粒材料参数^[13-15]

Table 4. SiC particle material parameters^[13-15]

参数	取值
密度 ρ₃ / (g·cm⁻³)	3 200
弹性模量 E₃ / MPa	485 000
泊松比 ε₃	0.2
热传导系数 λ / (W·m⁻¹·K⁻¹)	81
比热容 c / (J·kg⁻¹·K⁻¹)	427
热膨胀系数 α₂ / K⁻¹	4.09 × 10⁻⁹

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