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Volume 45 Issue 4
Aug.  2025
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Article Navigation >  Diamond & Abrasives Engineering  > 2025  >  45(4): 526-533
ZHANG Cheng, QIN Rui, BAI Jihao. Effect of double-sided polishing on surface morphology of quartz mask blanks[J]. Diamond & Abrasives Engineering, 2025, 45(4): 526-533. doi: 10.13394/j.cnki.jgszz.2024.0161
Citation: ZHANG Cheng, QIN Rui, BAI Jihao. Effect of double-sided polishing on surface morphology of quartz mask blanks[J]. Diamond & Abrasives Engineering, 2025, 45(4): 526-533. doi: 10.13394/j.cnki.jgszz.2024.0161
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Effect of double-sided polishing on surface morphology of quartz mask blanks

doi: 10.13394/j.cnki.jgszz.2024.0161

  • Hunan Omnisun Information Material Co., Ltd., Changsha 410017, China

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  • Received Date: 2024-10-07
  • Accepted Date: 2024-12-02
  • Rev Recd Date: 2024-12-02
    Abstract
  •   Objectives  As the critical dimensions in integrated circuit structures continue to shrink, transistor density and chip performance keep improving. At the same time, the continuous evolution of integrated circuit manufacturing processes increasingly demands stricter flatness requirements for mask blanks. To reveal the polishing removal mechanism of double-sided chemical mechanical polishing on quartz mask substrates, a polishing solution is made using CeO2 abrasive to perform double-sided polishing on 6025 quartz mask substrates.   Methods  (1) CeO2 polishing powders with particle size distributions D50 of 0.823 and 1.231 μm respectively are placed in a beaker with deionized water. Under mechanical stirring, a certain amount of a mixture of sodium hexametaphosphate and sodium citrate is added as a dispersant, and an appropriate amount of polyacrylate as a surfactant. The pH value is adjusted using a weak alkali substance. Based on the content of CeO2, polishing liquids with mass fractions of 6%, 10%, 14%, and 18% are prepared. (2) The CMP experiment is conducted on a 22B double-sided polisher using an LP66 polyurethane polishing pad to polish 6025 synthetic quartz substrate grinding discs. The same set of polishing parameters is used to polish 12 pieces of 6025 simultaneously, and then the flatness and roughness of the 12 pieces of glass are averaged. For the polishing slurry, experiments are conducted with two types of polishing powder particle sizes and four types of polishing slurry concentrations. The surface morphology of different particle size CeO2 polishing powders is observed using a Zeiss Sigma field emission scanning electron microscope. The particle size distribution of the polishing powders is analyzed using a Mastersize 2000 laser particle size analyzer. The flatness of the quartz substrates before and after polishing is measured using a Tropel® UltraFlat™ flatness tester from CORNING. The change in thickness of the quartz substrates before and after polishing is measured using a KEYENCE displacement sensor to calculate the polishing rate. The roughness of the quartz substrates after polishing is measured using a Dimension ICON atomic force microscope from Bruker Germany.   Results  The flatness can reach 0.573 μm, and the surface roughness Ra is 0.96 nm under the following conditions: equivalent particle size D50 of CeO2 0.823 μm, mass fraction of CeO2 14%, polishing pressure 0.43 MPa, and a gear ring and sun gear speed of 6.54 and 3.08 r/min, respectively.  Conclusions  (1) The surface roughness of quartz glass after polishing with fine-grained 230A is reduced by 40% compared to that after polishing with 1200A. (2) With the increase in the concentration of the polishing solution, the flatness of the front surface initially shows a decreasing trend. It reaches a minimum value at a mass fraction of 14%. However, if the concentration is further increased, the flatness actually increases. The removal rate of the quartz glass increases continuously with the concentration of the polishing solution. (3) As the polishing pressure increases within the range of 0.26-0.43 MPa, the removal rate basically changes linearly. However, if the pressure is further increased, the removal rate actually decreases. (4) Using abrasive particles with an equivalent diameter D50 of 0.823 μm, a polishing solution with a concentration of 14% CeO2 is prepared. Under a polishing pressure of 0.43 MPa, and a ring gear and sun gear speed of 6.54 and 3.08 r/min, respectively, the surface of the 6025 quartz glass is polished to be smooth with almost no scratches or median cracks, achieving smaller flatness and better surface quality.

     

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