Preparation of polycrystalline diamond films by MPCVD at high plasma power density

HE Zhongwen; MA Zhibin

doi:10.13394/J.cnki.jgszz.2021.0121

Volume 42 Issue 2

May 2022

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HE Zhongwen, MA Zhibin. Preparation of polycrystalline diamond films by MPCVD at high plasma power density[J]. Diamond & Abrasives Engineering, 2022, 42(2): 156-161. doi: 10.13394/J.cnki.jgszz.2021.0121

Citation:

HE Zhongwen, MA Zhibin. Preparation of polycrystalline diamond films by MPCVD at high plasma power density[J]. Diamond & Abrasives Engineering, 2022, 42(2): 156-161. doi: 10.13394/J.cnki.jgszz.2021.0121

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Preparation of polycrystalline diamond films by MPCVD at high plasma power density

doi: 10.13394/J.cnki.jgszz.2021.0121

HE Zhongwen,
MA Zhibin^,

Key Laboratory of Plasma Chemical and Advance Materials of Hubei Province, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China

More Information

Received Date: 2021-07-11
Accepted Date: 2022-03-18
Rev Recd Date: 2021-12-27

Abstract

Abstract

Through the self-made MPCVD dual-substrate platform equipment, the microwave power was 1 400 W and the pressure was medium to high, the plasma power density was 357.5～807.4 W/cm³, the substrate temperature was 850 ± 30 ℃, the volume fraction of CH₄ was 1.0%～1.5% and the deposition rate was 1～8 μm/h, the polycrystalline diamond film of different quality was deposited on the silicon substrate with a diameter of 11.5 mm. The hydrogen atoms and the C-containing groups in the plasma, the morphology and the quality of polycrystalline films were characterized by spectrometer, optical microscope and Raman spectrometer. The results show that with the increases of plasma power density, the strength of hydrogen atom group and active C-containing group in plasma ellipsoid increase, the growth rate and the purity of diamond film are greatly improved. When the air pressure is 21 kPa, the plasma power density is 807.4 W/cm³, the substrate temperature is 850 ± 30 ℃, the growth time is 150 h, the CH₄ volume fraction is 1.0% and the hydrogen flow rate is 200 mL/min, the growth rate of the diamond film reaches 5 μm/h, the thickness of the diamond film reaches 752.0 μm, the FWHM of the diamond Raman peak is 6.48 cm⁻¹, and the quality of the grown diamond film is good.
- microwave plasma chemical vapor deposition (MPCVD),
- diamond film,
- plasma power density,
- deposition speed,
- film quality

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References(13)

References

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