CN 41-1243/TG ISSN 1006-852X
Volume 42 Issue 1
Mar.  2022
Turn off MathJax
Article Contents
LIANG Huazhuo, FU Youzhi, HE Junfeng, XU Lanying, YAN Qiusheng. Magnetorheological chemical compound polishing of single crystal SiC substrate[J]. Diamond &Abrasives Engineering, 2022, 42(1): 129-135. doi: 10.13394/j.cnki.jgszz.2021.0108
Citation: LIANG Huazhuo, FU Youzhi, HE Junfeng, XU Lanying, YAN Qiusheng. Magnetorheological chemical compound polishing of single crystal SiC substrate[J]. Diamond &Abrasives Engineering, 2022, 42(1): 129-135. doi: 10.13394/j.cnki.jgszz.2021.0108

Magnetorheological chemical compound polishing of single crystal SiC substrate

doi: 10.13394/j.cnki.jgszz.2021.0108
  • Received Date: 2021-08-11
  • Accepted Date: 2021-11-11
  • Rev Recd Date: 2021-11-01
  • Based on the magnetorheological chemical composite polishing principle of Fenton reaction, the magnetorheological chemical composite polishing experiment was carried out on single crystal SiC substrate, and the influence of process parameters on the polishing effect was studied. The results show that with the increase of diamond particle size, material removal increases first and then decreases, while surface roughness decreases first and then increases. With the increase of abrasive mass fraction, material removal rate increases, and surface roughness decreases first and then increases. When the mass fraction of carbonyl iron powder increases, material removal rate increases, while surface roughness decreases first and then increases. With the increase of oxidant mass fraction, material removal increases first and then decreases, while the surface roughness decreases first and then increases. The influence of machining gap on material removal rate varies greatly. When machining gap is 1.0 mm, machined surface quality is better. With the increase of workpiece speed and polishing disc speed, the material removal rate first increases and then decreases, and the surface roughness first decreases and then increases. The optimized process parameters are as follows: the abrasive particle size is 1.0 μm, the mass fraction is 5%, the mass fraction of carbonyl iron powder is 25%, the mass fraction of hydrogen peroxide is 5%, the machining gap is 1.0 mm, the workpiece speed is 500 r/min, and the polishing disc speed is 20 r/min. The single crystal SiC with surface roughness of about 40.00 nm was processed with optimized process parameters to obtain a smooth surface with surface roughness of less than 0.10 nm.

     

  • loading
  • [1]
    RAYNAUD C, TOURNIER D, MOREL H, et al. Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices [J]. Diamond and Related Materials,2010,19(1):1-6. doi: 10.1016/j.diamond.2009.09.015
    [2]
    ZHOU L, AUDURIER V, PIROUZ P, et al. Chemomechanical polishing of silicon carbide [J]. Journal of the Electrochemical Society,1997,144(6):161-163. doi: 10.1149/1.1837711
    [3]
    OKUMURA H. Present status and future prospect of widegap semiconductor high-power devices [J]. Japanese Journal of Applied Physics,2006,45(10A):7565-7586. doi: 10.1143/JJAP.45.7565
    [4]
    PUSHPAKARAN B N, SUBBURAJ A S, BAYNE S B, et al. Impact of silicon carbide semiconductor technology in photovoltaic energy system [J]. Renewable and Sustainable Energy Reviews,2016,55:971-989. doi: 10.1016/j.rser.2015.10.161
    [5]
    AIDA H, DOI T, TAKEDA H, et al. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials [J]. Current Applied Physics,2012,12(9):41-46.
    [6]
    SHI X, PAN G, ZHOU Y, et al. Extended study of the atomic step-terrace structure on hexagonal SiC(0001) by chemical-mechanical planarization [J]. Applied Surface Science,2013,284:195-206. doi: 10.1016/j.apsusc.2013.07.080
    [7]
    叶子凡, 周艳, 徐莉, 等. 紫外LED辅助的4H-SiC化学机械抛光 [J]. 纳米技术与精密工程,2017,15(5):342-346.

    YE Zifan, ZHOU Yan, XU Li, et al. Chemical mechanical polishing of 4H-SiC wafer with UV-LED light [J]. Nanotechnology and Precision Engineering,2017,15(5):342-346.
    [8]
    徐少平. 基于芬顿反应的单晶SiC集群磁流变化学复合抛光研究 [D]. 广州: 广东工业大学, 2016.

    XU Shaoping. Research on chemical cluster magnetorheological compound polishing of single-crystal SiC based on Fenton reaction [D]. Guangzhou: Guangdong University of Technology, 2016.
    [9]
    JAIN V K, RANJAN P, SURI V K, et al. Chemo-mechanical magnetorheological finishing (CMMRF) of silicon for microelectronics applications [J]. CIRP Annals-Manufacturing Technology,2010,59(1):323-328. doi: 10.1016/j.cirp.2010.03.106
    [10]
    RANJAN P, BALASUBRAMANIAM R, SURI V K, et al. Development of chemo-mechanical magnetorheological finishing process for super finishing of copper alloy [J]. International Journal of Manufacturing Technology & Management,2013,27(4-6):130-141.
    [11]
    尹韶辉, 王永强, 李叶鹏, 等. 蓝宝石基片的磁流变化学抛光试验研究 [J]. 机械工程学报,2016,52(5):80-87. doi: 10.3901/JME.2016.05.080

    YIN Shaohui, WANG Yongqiang, LI Yepeng, et al. Experimental study on magnetorheological chemical polishing for sapphire substrate [J]. Journal of Mechanical Engineering,2016,52(5):80-87. doi: 10.3901/JME.2016.05.080
    [12]
    NAM S, RENGANATHAN V, TRATNYEK P G. Substituent effects on azo dye oxidation by the FeIII-EDTA-H2O2 system[J]. Chemosphere, 2001, 45(1): 59-65.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(11)  / Tables(1)

    Article Metrics

    Article views (161) PDF downloads(19) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return